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© 2009-2012 by RF Monolithics, Inc.

XVT9002 - 2/21/12

Electrical Characteristics

Characteristic

Sym

Notes

Minimum

Typical

Maximum

Units

Nominal Frequency

Fo

26.000000

MHz

Storage Temperature

-40

+85

°C

Operating Temperature Range

-30

+75

°C

Power Supply Voltage

Vcc

2.3

2.4

2.5

V

Output Voltage with Load 10 pF ||10 K



Vout

0.8

Output Waveform

clipped sinewave

Power Supply Current

Icc

1.2

mA

Control Voltage

Vcon

1.2±1.0

V

Control Voltage Input Impedance

100K

ohms

Frequency Tolerance, Vcontrol = 1.2 V, after Reflow

±2.5 ppm max @ 25 °C ±3 °C

Frequency Stability versus:

±2.5

ppm

Temperature, -30 to 75 °C

Supply Voltage, 2.3 to 2.5 V

±0.3

ppm

Load 10 pF||10 K

±10%

±0.2

ppm

Control Voltage Frequency Range, 1.2 ±1.0 V

±9

±15

ppm

2.0

ms

Aging @ 25 °C

±1

ppm/year

Harmonics

-5.0

dBc

SSB Phase Noise @ 1 kHz Carrier Offset

-130 dBc/Hz maximum

Stanard Shipping Quantity on 180 mm (7”) Reel

1000

units

Lid Symbolization

9002 // YWWS

SM3225-4 Case

• Voltage Controlled Temperature Compensated Crystal Oscillator

• Excellent Frequency Stability & Low Phase Noise

• 3.2 x 2.5 x 1.3 mm Surface-Mount Case

• Complies with Directive 2002/95/EC (RoHS)

26 MHz

VCTCXO

XVT9002

CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.

Notes:

1.

The design, manufacturing process, and specifications of this device are subject to change without notice.

Pb

Preliminary