ENA1908A datasheet(2/5 Pages) SANYO

2 / 5 page

BMS3004

No. A1908-2/5

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--75

Zero-Gate Voltage Drain Current

IDSS

VDS=--75V, VGS=0V

--10

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.2

--2.6

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--34A

120

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--34A, VGS=--10V

6.5

8.5

RDS(on)2

ID=--34A, VGS=--4V

8.3

11.4

Input Capacitance

Ciss

VDS=--20V, f=1MHz

13400

Output Capacitance

Coss

1000

Reverse Transfer Capacitance

Crss

740

Turn-ON Delay Time

td(on)

See Fig.2

Rise Time

245

Turn-OFF Delay Time

td(off)

1400

Fall Time

650

Total Gate Charge

VDS=--48V, VGS=--10V, ID=--68A

300

Gate-to-Source Charge

Qgs

Gate-to-Drain “Miller” Charge

Qgd

Diode Forward Voltage

VSD

IS=--68A, VGS=0V

--0.9

--1.5

Reverse Recovery Time

trr

See Fig.3

IS=--68A, VGS=0V, di/dt=--100A/μs

146

Reverse Recovery Charge

Qrr

470

Fig.1 Avalanche Resistance Test Circuit

Fig.2 Switching Time Test Circuit

Fig.3 Reverse Recovery Time Test Circuit

50Ω

--10V

≥50Ω

VDD

BMS3004

PW=10μs

D.C.≤1%

P.G

50Ω

ID= --34A

RL=1.4Ω

VDD= --48V

VOUT

VIN

--10V

VIN

BMS3004

VDD

BMS3004

Driver MOSFET

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