MJ11017 MJ11021 MJ11018 MJ11022

3

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.01

0.1

1.0

1.0

100

R

θJC(t) = r(t) RθJC

R

θJC(t) = 0.86°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

SINGLE PULSE

1000

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 3. Thermal Response

0.05

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02

0.03 0.05

0.2

0.3 0.5

2.0

3.0 5.0

200 300

500

10

20

30

50

0.1

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

10

20

200

3.0

50

100

Figure 4. Maximum Rated Forward Bias Safe

Operating Area (FBSOA)

0.3

0.2

0

0.5

7.0

30

70

150

dc

0.1 ms

3.0

2.0

1.0

5.0

30

20

10

TJ = 175°C

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITATION @ TC = 25°C

SINGLE PULSE

0.5 ms

1.0 ms

5.0 ms

MJ11017, 18

MJ11021, 22

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 175_C, TC is

variable dependIng on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 175_C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

20

100

140

260

0

180

220

60

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20

0

Figure 5. Maximum RBSOA, Reverse Bias Safe

Operating Area

10

30

L = 200

µH

IC/IB1 ≥ 50

TC = 25°C

VBE(off) 0 – 5.0 V

RBE = 47 Ω

DUTY CYLE = 10%

MJ11017, 18

MJ11021, 22

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be hold to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 5 gives ROSOA characteristics.