ACE3400 datasheet(2/7 Pages) ACE

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ACE3400

N-Channel Enhancement Mode MOSFET

VER 1.4

Packaging Type

SOT-23-3L

Ordering information

ACE3400 XX + H

Electrical Characteristics

TA=25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250 uA

Gate Threshold Voltage

VGS(th)

VD=VGS, ID=250uA

0.8

1.6

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=24V, VGS=1.0V

VDS=24V, VGS=0V TJ=55℃

On-State Drain Current

ID(ON)

VDS≧4.5V, VGS=4.5V

Drain-Source

On-Resistance

RDS(ON)

VGS=10V, ID=5.4A

0.030

0.038

VGS=4.5V, ID=4.6A

0.034

0.042

VGS=2.5V, ID=3.8A

0.040

0.055

Forward Transconductance

Gfs

VDS=4.5V,ID=5.4A

Diode Forward Voltage

VSD

IS=1.7A, VGS=0V

0.8

1.2

Dynamic

Total Gate Charge

VDS=15V, VGS=10V, ID=6.7A

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

3.2

Input Capacitance

Ciss

VDS=15, VGS=0V, f=1MHz

450

Output Capacitance

Coss

240

SOT-23-3L

Description

Gate

Source

Drain

Halogen - free

BM : SOT-23-3L

Pb - free

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