ACE5801 datasheet(1/5 Pages) ACE

Part #	ACE5801

Description	P-Channel Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	ACE [ACE Technology Co., LTD.]

Direct Link	http://www.ace-ele.com

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ACE5801

P-Channel Power MOSFET

VER 1.2

1

Description

The ACE5801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with low gate voltage.

. This device is suitable for use as a load switching application and a wide variety of other applications.

Features

 Advanced trench MOSFET process technology

 Ultra low on-resistance with low gate charge

Applications

 PWM application

 Load switch

 Battery charge in cellular handset

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-12

V

Gate-Source Voltage

VGSS

±8

V

Drain Current-Continuous

ID

-16

A

Drain Current-Pulsed (note 1)

IDM

-65

Power Dissipation (note 2, TA=25℃)

PD

2.5

W

Maximum Power Dissipation (note 3, TC=25℃)

18

Thermal Resistance from Junction to Ambient (note 4)

RθJA

50

℃/W

Thermal Resistance from Junction to case (note 4)

RθJC

6.9

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55~150

Packaging Type

DFNWB2*2-6L

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ACE5801 Datasheet(PDF) 1 Page - ACE Technology Co., LTD.

ACE5801 Datasheet(HTML) 1 Page - ACE Technology Co., LTD.

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