HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200801

Issued Date : 2008.07.22

Revised Date : 2009.0514

Page No. : 1/6

H07N65E, H07N65F

HSMC Product Specification

H07N65 Series

H07N65 Series Pin Assignment

N-Channel Power Field Effect Transistor

Description

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed

to withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

Features

• Robust High Voltage Termination

• Avalanc he Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and V

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

Drain-Source Voltage

650

V

Drain to Current (Continuous)

7

A

Drain to Current (Pulsed)

28

A

Gate-to-Source Voltage (Continue)

±30

V

H07N65E (TO-220AB)

H07N65F (TO-220FP)

120

48

W

W

Derate above 25

H07N65E (TO-220AB)

H07N65F (TO-220FP)

1.18

0.38

W/

°C

W/

Operating Temperature Range

-55 to 150

Storage Temperature Range

-55 to 150

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25

530

mJ

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

260

°C

1

2

3

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

1

2

3

Tab

H07N65 Series

Symbol:

G

D

S