MJD112 MJD117

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS – continued

Collector–Cutoff Current

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)

ICEX

—

—

10

500

µAdc

Collector–Cutoff Current (VCB = 80 Vdc, IE = 0)

ICBO

—

10

µAdc

Emitter–Cutoff Current (VBE = 5 Vdc, IC = 0)

IEBO

—

2

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.5 Adc, VCE = 3 Vdc)

(IC = 2 Adc, VCE = 3 Vdc)

(IC = 4 Adc, VCE = 3 Vdc)

hFE

500

1000

200

—

12,000

—

—

Collector–Emitter Saturation Voltage

(IC = 2 Adc, IB = 8 mAdc)

(IC = 4 Adc, IB = 40 mAdc)

VCE(sat)

—

—

2

3

Vdc

Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc)

VBE(sat)

—

4

Vdc

Base–Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc)

VBE(on)

—

2.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)

fT

25

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJD117

MJD112

Cob

—

—

200

100

pF

* Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

0.04

0.2

4

0.1

0.06

0.6

1

4

IC, COLLECTOR CURRENT (AMP)

VCC = 30 V

IC/IB = 250

2

1

0.8

0.6

0.4

0.2

ts

tf

Figure 1. Switching Times Test Circuit

Figure 2. Switching Times

V2

APPROX

+ 8 V

0

≈ 8 k

SCOPE

VCC

– 30 V

RC

51

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

25

µs

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

+ 4 V

tr

td @ VBE(off) = 0 V

PNP

NPN

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

V1

APPROX

–12 V

TUT

RB

D1

≈ 60

0.4

2

IB1 = IB2

TJ = 25°C

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