AO4435_11 datasheet(2/5 Pages) AOSMD

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AO4435

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

TJ = 55°C

-5

IGSS

±100

VGS(th)

-1.7

-2.3

-3

ID(ON)

-80

TJ=125°C

gFS

VSD

-0.74

-1

-3.5

Ciss

1130

1400

Coss

240

Crss

155

5.8

Ω

Qg(10V)

Qg(4.5V)

9.5

Qgs

5.5

Qgd

3.3

tD(on)

8.7

8.5

tD(off)

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=0V, VDS=-15V, f=1MHz

Input Capacitance

Output Capacitance

Turn-On Rise Time

Total Gate Charge

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=1.5Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Ω

SWITCHING PARAMETERS

Gate Source Charge

Gate Drain Charge

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-10A

DYNAMIC PARAMETERS

Maximum Body-Diode Continuous Current

Gate resistance

VGS=0V, VDS=0V, f=1MHz

IS = -1A,VGS = 0V

VDS = -5V, ID = -10A

VGS = -5V, ID = -5A

VGS = -10V, ID = -10A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

µA

Gate Threshold Voltage

VDS = VGS ID = -250µA

VDS = -30V, VGS = 0V

VDS = 0V, VGS = ±25V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID = -250µA, VGS = 0V

VGS = -10V, VDS = -5V

VGS = -20V, ID = -11A

Reverse Transfer Capacitance

IF=-10A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A = 25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.

Rev7: Nov. 2010

Alpha & Omega Semiconductor, Ltd.

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