AO4442_11 datasheet(2/5 Pages) AOSMD

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AO4442

Symbol

Min

Typ

Max

Units

BVDSS

VDS=60V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

2.4

ID(ON)

100

130

TJ=125°C

180

220

120

165

Ω

gFS

8.2

VSD

0.79

3.5

Ciss

303

350

Coss

Crss

2.2

Ω

Qg(10V)

5.2

6.5

Qg(4.5V)

2.46

3.5

Qgs

Qgd

1.34

tD(on)

4.5

2.3

tD(off)

15.6

1.9

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=37.5V, RL=12Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=37.5V, ID=3.1A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Ω

IS=1A,VGS=0V

VDS=5V, ID=3.1A

VGS=4.5V, ID=2A

Forward Transconductance

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

IDSS

µA

VDS=VGS, ID=250µA

VDS=0V, VGS= ±25V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

ID=10mA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=3.1A

Reverse Transfer Capacitance

IF=3.1A, dI/dt=100A/µs

VGS=0V, VDS=37.5V, f=1MHz

SWITCHING PARAMETERS

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialTJ=25°C.

D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in

2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

Rev 2: June 2011

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