AO4443_11 datasheet(2/5 Pages) AOSMD

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AO4443

Symbol

Min

Typ

Max

Units

BVDSS

-40

VDS=-40V, VGS=0V

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

Gate Threshold Voltage

-1.5

-2

-2.6

ID(ON)

TJ=125°C

46.5

Ω

gFS

VSD

-0.76

-1

-3.5

Ciss

750

940

1175

Coss

Crss

Ω

Qg(10V)

17.3

Qg(4.5V)

8.4

Qgs

3.2

Qgd

4.3

tD(on)

10.3

4.3

VGS=0V, VDS=-20V, f=1MHz

SWITCHING PARAMETERS

VDS=VGS ID=-250µA

VGS=-4.5V, ID=-5A

Forward Transconductance

VGS=-10V, ID=-6A

Reverse Transfer Capacitance

Maximum Body-Diode Continuous Current

Ω

=-10V, V =-20V,

DYNAMIC PARAMETERS

Turn-On DelayTime

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VDS=-5V, ID=-6A

RDS(ON)

Static Drain-Source On-Resistance

Total Gate Charge

VGS=-10V, VDS=-20V, ID=-6A

Gate Source Charge

Gate Drain Charge

IS=-1A,VGS=0V

Diode Forward Voltage

Input Capacitance

Output Capacitance

Turn-On Rise Time

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-10V, VDS=-5V

VDS=0V, VGS=±20V

Gate-Body leakage current

4.3

tD(off)

46.5

trr

Qrr

11.5

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

IF=-6A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=-6A, dI/dt=100A/µs

VGS=-10V, VDS=-20V,

RL=3.35Ω, RGEN=3Ω

Turn-Off DelayTime

Turn-Off Fall Time

Turn-On Rise Time

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J=25°C.

D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

Rev 4: August 2011

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