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DTM8205 Datasheet(PDF) 1 Page - DinTek Semiconductor Co,.Ltd |
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DTM8205 Datasheet(HTML) 1 Page - DinTek Semiconductor Co,.Ltd |
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1 / 8 page ![]() 1 Dual N-Channel 2.5-V (G-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 20 0.022 at VGS = 4.5 V 6.5 0.030 at VGS = 2.5 V 5.5 D S1 S1 G1 1 2 3 4 8 7 6 5 D S2 S2 G2 TSSOP-8 Top View Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 6.5 5.2 A TA = 70 °C 5.5 3.5 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C PD 1.5 1.0 W TA = 70 °C 0.96 0.64 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 72 83 °C/W Steady State 100 120 Maximum Junction-to-Foot (Drain) Steady State RthJF 55 70 Available Pb-free RoHS* COMPLIANT G1 S1 G2 D S2 D DT www. daysemi.jp |
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