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4468 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # 4468
Description  100V Dual N-Channel MOSFET
PDF  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

4468 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AO4886
100V Dual N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
3.3A
RDS(ON) (at VGS=10V)
< 80m
Ω
RDS(ON) (at VGS = 4.5V)
< 91m
Ω
100% UIS Tested
100% Rg Tested
Symbol
VDS
The AO4886 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
100V
Drain-Source Voltage
100
G2
D2
S2
G1
D1
S1
G1
S1
G2
S2
D1
D1
D2
D2
2
4
5
1
3
8
6
7
Top View
SOIC-8
Top View
Bottom View
Pin1
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJL
48
40
Maximum Junction-to-Ambient
A
TA=25°C
2.00
Maximum Junction-to-Lead
Maximum Junction-to-Ambient
A D
32
90
V
Drain-Source Voltage
100
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
TA=70°C
°C/W
°C/W
74
62.5
A
ID
10
A
14
°C/W
W
RθJA
Units
Thermal Characteristics
Parameter
Typ
Max
Gate-Source Voltage
2.7
17
mJ
Junction and Storage Temperature Range
-55 to 150
°C
1.28
V
±20
TA=25°C
TA=70°C
Avalanche Current
C
3.3
Power Dissipation
B
PD
G2
D2
S2
G1
D1
S1
G1
S1
G2
S2
D1
D1
D2
D2
2
4
5
1
3
8
6
7
Top View
SOIC-8
Top View
Bottom View
Pin1
Rev 0: Sep 2010
www.aosmd.com
Page 1 of 6


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