AOB282L datasheet(2/6 Pages) AOSMD

2 / 6 page

AOT282L/AOB282L

Symbol

Min

Typ

Max

Units

BVDSS

VDS=80V, VGS=0V

TJ=55°C

IGSS

±100

VGS(th)

Gate Threshold Voltage

2.2

2.85

3.5

ID(ON)

420

2.9

3.5

TJ=125°C

4.5

5.5

gFS

VSD

0.68

105

Ciss

7765

Coss

960

Crss

0.5

1.5

Ω

Q (10V)

127

178

3.4

4.9

3.7

Ω

2.6

3.2

5.2

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

VGS=10V, ID=20A

TO263

IS=1A,VGS=0V

VDS=5V, ID=20A

On state drain current

VGS=10V, VDS=5V

VDS=VGS ID=250µA

Static Drain-Source On-Resistance

VGS=6V, ID=20A

TO220

VGS=6V, ID=20A

TO263

VGS=10V, ID=20A

TO220

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

Reverse Transfer Capacitance

VGS=0V, VDS=40V, f=1MHz

SWITCHING PARAMETERS

RDS(ON)

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

Qg(10V)

127

178

Qg(4.5V)

Qgs

Qgd

tD(on)

tD(off)

trr

Qrr

320

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=10V, VDS=40V, RL=2Ω,

RGEN=3Ω

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=40V, ID=20A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev 0 : August 2012

www.aosmd.com

Page 2 of 6

AOB282L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

AOB282L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL