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AOB412L Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors |
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AOB412L Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors |
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6 / 7 page ![]() AOT412/AOB412L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 60 100 140 180 220 0 5 10 15 20 25 30 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 0 10 20 30 40 50 di/dt=800A/ µs 125ºC 125ºC 25ºC 25ºC Qrr Irm 20 40 60 80 100 120 140 160 180 0 200 400 600 800 1000 di/dt (A/ µµµµs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt 0 10 20 30 40 50 125ºC 125ºC 25ºC 25ºC Is=20A Qrr Irm 0 5 10 15 20 25 30 0 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 0 0.5 1 1.5 2 di/dt=800A/ µs 125ºC 125ºC 25ºC 25ºC trr S 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 di/dt (A/ µµµµs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt 0 0.5 1 1.5 2 125ºC 25ºC 25ºC 125ºC Is=20A trr S Rev2: Jul 2011 www.aosmd.com Page 6 of 7 |
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