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Datasheet

Datasheet

BM2PXX4 Series

TSZ02201-0F2F0A200070-1-2

28.NOV.2012.Rev.003

© 2012 ROHM Co., Ltd. All rights reserved.

www.rohm.com

TSZ22111・15・001

●Absolute Maximum Ratings（Ta=25

°C）

Parameter

Symbol

Rating

Unit

Conditions

Maximum applied voltage 1

-0.3～30

V

VCC

Maximum applied voltage 2

-0.3～6.5

V

SOURCE, FB

Maximum applied voltage 3

V

650

V

DRAIN

Drain current pulse

I

DP

10.40

A

(BM2P014)

Drain current pulse

I

DP

5.20

A

(BM2P034)

Drain current pulse

I

DP

2.60

A

(BM2P054)

Drain current pulse

I

DP

1.30

A

(BM2P094)

Allowable dissipation

2000

mW

When implemented

Operating

temperature range

-40 ～ +105

Storage

temperature range

-55 ～ +150

Reduce to 16 mW/

°C when Ta = 25°C or above.

●Operating Conditions（Ta=25

°C）

Parameter

Symbol

Rating

Unit

Conditions

Power supply voltage range 1

VCC

8.9～26.0

V

VCC pin voltage

Power supply voltage range 2

V

DRAIN

～

650

V

DRAIN pin voltage

●Electrical Characteristics of MOSFET part (Unless otherwise noted, Ta = 25

°C, VCC = 15 V)

Parameter

Symbol

Specifications

Unit

Conditions

Minimum

Standard

Maximum

[MOSFET Block ]

Between drain and

source voltage

V

(BR)DDS

650

-

-

V

I

Drain leak current

I

DSS

-

-

100

uA

V

On resistance

R

DS(ON)

-

1.4

2.0

Ω

I

(BM2P014)

On resistance

R

DS(ON)

-

2.4

3.6

Ω

I

(BM2P034)

On resistance

R

DS(ON)

-

4.0

5.5

Ω

I

(BM2P054)

On resistance

R

DS(ON)

-

8.5

12.0

Ω

I

(BM2P094)