AD7886 datasheet(3/16 Pages) AD

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AD7886

–3–

REV. B

TIMING CHARACTERISTICS

(VDD = +5 V

5%, VSS = –5 V

5%, AGND = DGND = 0 V)

Limit at

TMIN, TMAX

Parameter

(J, K Versions)

(B Version)

(T Version)

Units

Conditions/Comments

ns min

CONVST Pulse Width

Fs max

ns min

CS to RD Setup Time

ns min

CS to RD Hold Time

ns min

RD Pulse Width

100

ns max

CONVST to BUSY Propagation Delay, (CL = 10 pF)

ns max Data Access Time After

ns min Bus Relinquish Time After

ns max

ns min Data Setup Time Prior to

BUSY, (CL = 20 pF)

ns min Data Setup Time Prior to

BUSY, (CL = 100 pF)

ns min Bus Relinquish Time After

CONVST

100

ns max

t10

ns min

CS High to CONVST Low

t11

ns min

BUSY High to RD Low

t12

250

ns typ

BUSY High to CONVST Low, SHA Acquisition Time

t13

1.333

µs min Sampling Interval

tCONV

950

ns typ

Conversion Time

1000

ns max

NOTES

1Timing specifications in bold print are 100% production tested. All other times are sample tested at +25

°C to ensure compliance. All input signals are specified with tr =

tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.

6 is measured with the load circuit of Figure 1 and defined as the time required for an output to cross 0.8 V or 2.4 V.

7 and t9 are derived from the measured time taken by the data outputs to change by 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapo-

lated back to remove the effects of charging or discharging the load capacitor, CL. This means that the times, t7 and t9, quoted in the timing characteristics are the true bus

relinquish times of the part and as such are independent of external bus loading capacitances.

Specifications subject to change without notice.

WARNING!

ESD SENSITIVE DEVICE

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD7886 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

TO OUTPUT

+2.1V

IOH

Figure 1. Load Circuit for Bus Access and Relinquish Time

ABSOLUTE MAXIMUM RATINGS

1, 2

(TA= +25

°C unless otherwise noted)

VDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

VSS to AGND . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –7 V

AGND to DGND . . . . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V

VIN1, VIN2, SUM, +5REF to AGND . . . . . . –15 V to +15 V

VREF to AGND . . . . . . . . . . . . . . . . VSS –0.3 V to VDD +0.3 V

Digital Inputs to DGND

CS, RD, CONVST . . . . . . . . . . . . . . –0.3 V to VDD +0.3 V

Digital Outputs to DGND

DB0 to DB11, BUSY . . . . . . . . . . . . . –0.3 V to VDD +0.3 V

Operating Temperature Range

Commercial (J, K Versions) . . . . . . . . . . . . . . 0

°C to +70°C

Industrial (B Version) . . . . . . . . . . . . . . . . –40

°C to +85°C

Extended (T Version) . . . . . . . . . . . . . . . –55

°C to +125°C

Storage Temperature Range . . . . . . . . . . . . –65

°C to + 150°C

Lead Temperature (Soldering, 10 secs) . . . . . . . . . . . . +300

°C

Power Dissipation (Any Package) to +75

°C . . . . . . 1000 mW

Derates above +75

°C by . . . . . . . . . . . . . . . . . . . . 10 mW/°C

NOTES

1Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress rating only; functional operation

of the device at these or any other conditions above those listed in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

2If V

SS is open circuited with VDD and AGND applied, the VSS pin will be pulled

positive, exceeding the Absolute Maximum Ratings. If this possibility exists, a

Schottky diode from VSS to DGND (cathode end to GND) ensures that the

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