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AD8012ARM Datasheet(PDF) 13 Page - Analog Devices |
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AD8012ARM Datasheet(HTML) 13 Page - Analog Devices |
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13 / 15 page ![]() AD8012 –13– REV. A Choosing the Appropriate Turns Ratio for the Transformer Increasing the peak-to-peak output signal from the amplifier in the previous example, combined with a variation in the turns ratio of the transformer, can yield further enhancements to the circuit. The output signal swing of the AD8012 can be increased to about ±3.9 V before clipping occurs. This increases the peak- to-peak output of the differential amplifier to 15.6 V. Because the signal applied to the primary winding is now bigger, the transformer turns ratio of 1:1 can be replaced with a (step- down) turns ratio of about 1.3:1 (from amplifier to line). This steps the 7.8 V peak-to-peak primary voltage down to 6 V. This is the same secondary voltage as before so the resulting power delivered to the line is the same. The received signal, which is small relative to the transmitted signal, will, however be stepped up by a factor of 1.3. Amplifying the received signal in this manner enhances its signal-to-noise ratio and is useful when the received signal is small compared to the to-be-transmitted signal. The impedance reflected from the 135 Ω line now becomes 228 Ω (1.32 times 135 Ω). With a correctly terminated line, the amplifier must now drive a total load of 456 Ω (114 Ω + 114 Ω + 228 Ω), considerably less than the original 270 Ω load. This reduces the drive current from the op amps by about 40%. More significant however is the reduction in dynamic power consumption; that is, the power the amplifier must consume in order to deliver the load power. Increasing the output signal so that it is as close as possible to the power rails, minimizes the power consumed in the amplifier. There is, however, a price to pay in terms of increased signal distortion. Increasing the output signal of each op amp from the original ±3 V to ±3.9 V reduces the Spurious Free Dynamic Range (SFDR) from –65 dB to –50 dB (measured at 500 kHz), even though the overall load impedance has increased from 270 Ω to 456 Ω. LAYOUT CONSIDERATIONS The specified high speed performance of the AD8012 requires careful attention to board layout and component selection. Table I shows recommended component values for the AD8012 and Figures 44–49 show recommended layouts for the 8-lead SOIC and microSOIC packages for a positive gain. Proper RF design techniques and low parasitic component selections are mandatory. Table I. Typical Bandwidth vs. Gain Setting Resistors Small Signal –3 dB BW (MHz), Gain RF RG RT VS = 5 V, RL = 1 k –1 750 Ω 750 Ω 53.6 Ω 110 +1 750 Ω – 49.9 Ω 350 +2 750 Ω 750 Ω 49.9 Ω 150 +10 750 Ω 82.5 Ω 49.9 Ω 40 RT chosen for 50 Ω characteristic input impedance. The PCB should have a ground plane covering all unused por- tions of the component side of the board to provide a low im- pedance ground path. The ground plane should be removed from the area near the input pins to reduce stray capacitance. Chip capacitors should be used for supply bypassing (see Fig- ure 43). One end should be connected to the ground plane and the other within 1/8 in. of each power pin. An additional (4.7 µF–10 µF) tantalum electrolytic capacitor should be con- nected in parallel. The feedback resistor should be located close to the inverting input pin in order to keep the stray capacitance at this node to a minimum. Capacitance greater than 1.5 pF at the inverting input will significantly affect high speed performance when operating at low noninverting gains. Stripline design techniques should be used for long signal traces (greater than about 1 in.). These should be designed with the proper system characteristic impedance and be properly termi- nated at each end. 0.1 F INVERTING CONFIGURATION VOUT RF RO* 10 F NONINVERTING CONFIGURATION VOUT RG RF RO* RT 0.1 F 10 F RT VIN RG VIN *RO CHOSEN FOR CHARACTERISTIC IMPEDANCE. *RO CHOSEN FOR CHARACTERISTIC IMPEDANCE. +VS + + –VS Figure 43. Inverting and Noninverting Configurations |
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