AO4922_11 datasheet(2/8 Pages) AOSMD

2 / 8 page

AO4922

Symbol

Min

Typ

Max

Units

BVDSS

VDS=24V, VGS=0V

0.01

0.1

TJ=125°C

IGSS

0.1

µA

VGS(th)

Gate Threshold Voltage

1.5

1.8

2.4

ID(ON)

15.8

TJ=125°C

20.2

25.2

18.5

Ω

gFS

VSD

0.38

0.5

Ciss

1980

2574

Coss

317

Crss

111

1.3

2.0

Ω

Qg(10V)

33.0

Qg(4.5V)

15.0

Qgs

5.3

Qgd

6.0

tD(on)

5.5

tD(off)

27.0

4.3

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=9A, dI/dt=300A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250uA, VGS=0V

VGS=4.5V, VDS=5V

VGS=10V, ID=9A

Reverse Transfer Capacitance

IF=9A, dI/dt=300A/µs

VDS=VGS ID=250µA

FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

Zero Gate Voltage Drain Current

VDS=0V, VGS= ±12V

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode + Schottky Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

Ω

VGS=4.5V, ID=7A

IS=1A,VGS=0V

VDS=5V, ID=9A

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.7Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Total Gate Charge

VGS=10V, VDS=15V, ID=9A

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM

are

based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.

B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

Rev1: May 2011

Alpha & Omega Semiconductor, Ltd.

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