AO4940_12 datasheet(2/7 Pages) AOSMD

2 / 7 page

AO4940

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

0.1

TJ=125°C

IGSS

0.1

µA

VGS(th)

Gate Threshold Voltage

1.3

1.65

2.5

ID(ON)

100

12.5

TJ=125°C

18.5

Ω

gFS

VSD

0.43

0.5

Ciss

903

1100

Coss

225

Crss

1.7

3.0

Ω

Qg(10V)

15.3

Qg(4.5V)

7.8

Qgs

2.0

Qgd

3.9

tD(on)

5.0

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=9.1A

Reverse Transfer Capacitance

VDS=VGS ID=250µA

FET1(Intergrated Schottky Diode) Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

Zero Gate Voltage Drain Current

VDS=0V, VGS= ±20V

Gate-Body leakage current

Maximum Body-Diode + Schottky Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Turn-On DelayTime

Ω

VGS=4.5V, ID=7.3A

IS=1A,VGS=0V

VDS=5V, ID=9.1A

Total Gate Charge

VGS=10V, VDS=15V, ID=9.1A

Gate Drain Charge

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

tD(on)

5.0

9.2

tD(off)

17.8

4.4

trr

Qrr

30.0

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=9.1A, dI/dt=300A/µs

IF=9.1A, dI/dt=300A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V,RL=1.65Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C.

C. The R

θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t≤ 10s thermal resistance rating.

Rev2: Jun. 2011

Alpha & Omega Semiconductor, Ltd.

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