AO7801 datasheet(2/4 Pages) AOSMD

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AO7801

Symbol

Min

Typ

Max

Units

BVDSS

-20

-1

TJ=55°C

-5

IGSS

±10

µA

VGS(th)

-0.5

-0.6

-0.9

ID(ON)

-3

400

520

TJ=125°C

542

700

540

700

Ω

700

950

Ω

gFS

1.7

VSD

-0.86

-1

-0.4

Ciss

114

140

Coss

Crss

Ω

1.44

1.8

Qgs

0.14

Qgd

0.35

tD(on)

6.5

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Gate Drain Charge

On state drain current

VGS=-4.5V, VDS=-5V

Maximum Body-Diode Continuous Current

Input Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=-4.5V, VDS=-10V, ID=-0.6A

Gate Source Charge

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Ω

VGS=-2.5V, ID=-0.5A

IS=-0.5A,VGS=0V

VDS=-5V, ID=-0.6A

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-16V, VGS=0V

VDS=0V, VGS=±8V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

VGS=-1.8V, ID=-0.4A

VGS=-4.5V, ID=-0.6A

Reverse Transfer Capacitance

VGS=0V, VDS=-10V, f=1MHz

Alpha & Omega Semiconductor, Ltd.

tD(on)

6.5

tD(off)

18.2

5.5

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-4.5V, VDS=-10V,

RL=16.7Ω, RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs

IF=-0.6A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Rev2: May 2012

Alpha & Omega Semiconductor, Ltd.

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