AOTF7S65 datasheet(2/7 Pages) AOSMD

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AOT7S65/AOB7S65/AOTF7S65

Symbol

Min

Typ

Max

Units

650

700

750

IGSS

Gate-Body leakage current

±100

VGS(th)

Gate Threshold Voltage

2.6

3.3

0.54

0.65

Ω

1.48

1.64

Ω

VSD

0.82

Maximum Body-Diode Continuous Current

ISM

Ciss

434

Coss

Co(er)

Co(tr)

Crss

17.5

Ω

9.2

Qgs

2.5

Qgd

2.7

tD(on)

tD(off)

trr

224

Irm

Qrr

2.8

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=0V, VDS=0 to 480V, f=1MHz

Effective output capacitance, time

IS=3.5A,VGS=0V, TJ=25°C

Input Capacitance

VGS=0V, VDS=100V, f=1MHz

Output Capacitance

Turn-Off DelayTime

Gate Drain Charge

Effective output capacitance, energy

Diode Forward Voltage

Body Diode Reverse Recovery Time

VGS=0V, VDS=100V, f=1MHz

Gate resistance

IF=3.5A,dI/dt=100A/µs,VDS=400V

Reverse Transfer Capacitance

VGS=10V, VDS=400V, ID=3.5A,

RG=25Ω

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=480V, ID=3.5A

Gate Source Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V

Maximum Body-Diode Pulsed Current

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Peak Reverse Recovery Current

IF=3.5A,dI/dt=100A/µs,VDS=400V

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

IDSS

VGS=10V, ID=3.5A, TJ=150°C

VGS=10V, ID=3.5A, TJ=25°C

VDS=5V,ID=250µA

µA

VDS=0V, VGS=±30V

BVDSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=25°C

VDS=650V, VGS=0V

VDS=520V, TJ=150°C

Zero Gate Voltage Drain Current

ID=250µA, VGS=0V, TJ=150°C

A. The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ

=25°C.

D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.

G. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C

H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.

I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.

J. Wavesoldering only allowed at leads.

Rev1: Mar 2012

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