AOB256L datasheet(2/6 Pages) AOSMD

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AOB256L

Symbol

Min

Typ

Max

Units

BVDSS

150

VDS=150V, VGS=0V

TJ=55°C

IGSS

±100

VGS(th)

Gate Threshold Voltage

1.8

2.25

2.8

ID(ON)

TJ=125°C

139

170

100

Ω

gFS

VSD

0.72

Ciss

1165

Coss

61.5

Crss

2.5

1.1

2.2

3.3

Ω

Qg(10V)

15.5

Qg(4.5V)

Qgs

Qgd

1.2

tD(on)

6.5

Turn-On Rise Time

=10V, V =75V, R =7.5

Ω,

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Total Gate Charge

SWITCHING PARAMETERS

Turn-On DelayTime

VGS=10V, VDS=75V, ID=10A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

Reverse Transfer Capacitance

VGS=0V, VDS=75V, f=1MHz

VDS=VGS，ID=250µA

VDS=0V, VGS=±20V

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Forward Transconductance

IS=1A,VGS=0V

VDS=5V, ID=10A

DYNAMIC PARAMETERS

VGS=4.5V, ID=8A

RDS(ON)

Static Drain-Source On-Resistance

Diode Forward Voltage

Ω

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=10A

Gate-Body leakage current

tD(off)

2.5

trr

Qrr

265

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=75V, RL=7.5Ω,

RGEN=3Ω

Turn-Off Fall Time

IF=10A, dI/dt=500A/µs

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=10A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev 0: August 2012

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