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MIPSZ2012D1R0 Datasheet(PDF) 6 Page - Panasonic Semiconductor |
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MIPSZ2012D1R0 Datasheet(HTML) 6 Page - Panasonic Semiconductor |
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6 / 17 page ![]() AN30180A 6 Ver. AEB *1 μA — 0 — VIN = 5.5 V,SHUTDOWN, VLX = 0 V or 5.5 V ILXL LX leak current *1 % — 82 — VOUT = 1.3 V, IOUT = 200mA EF1 Efficiency 1 *1 mV[p-p] — 5 — VOUT = 1.15 V, IOUT=600mA VRPL1 Output ripple voltage 1 *1 mV[p-p] — 20 — VOUT = 1.15 V, IOUT = 10 μA VRPL2 Output ripple voltage 2 *1 mV — 25 — C = 4.7 μF, VOUT = 1.15 V, IOUT = 10 μA to 400 mA , Δ t = 1 μs VLSU Output voltage fluctuation during load increase *1 mV — 50 — C = 4.7 μF, VOUT = 1.15 V, IOUT = 400 mA to 10 μA, Δ t = 1 μs VLSD Output voltage fluctuation during load decrease *1 μs — 5 — VOUT = 1.15 V, IOUT = 10 μA to 400 mA, Δ t = 1 μs TLSU Stabilization time when increased load current [DCDC] (DCDC step down regulator) *1 A — 1.8 — at VOUT drops from 1.15 V to 1.035 V CNT1 = L , CNT2 = L ILMT Output current limit Reference values Typ Unit Max Notes Min Conditions Symbol Parameter ELECRTRICAL CHARACTERISTICS (Continued) Cout = 4.7 μF (Murata), Lout = 1.0 μH (FDK) , VOUT Setting = 1.15V , V IN = AVIN = PVIN = 3.7 V, Ta = 25 °C ± 2 °C unless otherwise noted. *1 : Typical Value checked by design. |
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