MJE200 MJE210

3

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.02

0.05

1.0

2.0

5.0

10

20

50

100

200

0.1

0.5

0.2

1.0

0.2

0.1

0.05

θJC(t) = r(t) θJC

θJC = 8.34°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

Figure 4. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

30

7.0

0.7

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 5. Active Region Safe Operating Area

500

µs

dc

5.0

20

10

7.0

5.0

3.0

2.0

1.0

100

µs

TJ = 150°C

0.2

0.5

1.0

2.0

3.0

0.3

1.0 ms

5.0 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150 _C. TJ(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10K

IC, COLLECTOR CURRENT (AMPS)

10

5K

3K

2K

1K

500

300

200

100

50

Figure 6. Turn–Off Time

30

20

0.01

0.03 0.05

0.5

0.2

0.02

0.1

0.3

10

5

2

1

3

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

VR, REVERSE VOLTAGE (VOLTS)

20

40

100

200

50

Figure 7. Capacitance

70

20

10

6.0

4.0

2.0

1.0

0.4

0.6

TJ = 25°C

Cib

Cob

MJE200 (NPN)

MJE210 (PNP)

30

MJE200

MJE210