AOD425_11 datasheet(2/6 Pages) AOSMD

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AOD425

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

TJ=55°C

-5

IGSS

±10

VGS(th)

-1.5

-2.45

-3.5

ID(ON)

-70

13.5

TJ=125°C

18.5

gFS

VSD

-0.72

-1

-50

Ciss

1760

2200

Coss

360

Crss

255

6.4

Ω

Qg(10V)

Qg(4.5V)

Qgs

Qgd

tD(on)

11.5

Drain-Source Breakdown Voltage

On state drain current

ID=-250uA, VGS=0V

VGS=-10V, VDS=-5V

VGS=-10V, ID=-20A

Reverse Transfer Capacitance

VGS=-5V, ID=-20A

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

Total Gate Charge

Gate Drain Charge

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

VGS=0V, VDS=-15V, f=1MHz

SWITCHING PARAMETERS

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-20A

Input Capacitance

Output Capacitance

Ω

Maximum Body-Diode Continuous Current

Turn-On DelayTime

IS=-1A,VGS=0V

DYNAMIC PARAMETERS

Forward Transconductance

VDS=-5V, ID=-20A

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-30V, VGS=0V

µA

VDS=0V, VGS= ±25V

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

tD(on)

11.5

tD(off)

18.5

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs

IF=-20A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=0.75Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).

Rev3: May. 2010

Alpha & Omega Semiconductor, Ltd.

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