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MBR40040CT Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

Part # MBR40040CT
Description  Silicon Schottky Diode, 400A
PDF  2 Pages
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Manufacturer  NAINA [Naina Semiconductor ltd.]
Direct Link  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

MBR40040CT Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

  MBR40040CT Datasheet HTML 1Page - Naina Semiconductor ltd. MBR40040CT Datasheet HTML 2Page - Naina Semiconductor ltd.  
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Naina Semiconductor Ltd.
MBR40020CT thru
MBR40040CTR
1
D-95, Sector 63, Noida – 201301, India
•
Tel: 0120-4205450
•
Fax: 0120-4273653
sales@nainasemi.com
•
www.nainasemi.com
Silicon Schottky Diode, 400A
Features
•
Guard Ring Protection
•
Low forward voltage drop
•
High surge current capability
•
Up to 100V VRRM
Maximum Ratings (TJ = 25
oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40020CT
(R)
MBR40030CT
(R)
MBR40035CT
(R)
MBR40040CT
(R)
Units
Repetitive peak
reverse voltage
VRRM
20
30
35
40
V
RMS reverse voltage
VRMS
14
21
25
28
V
DC blocking voltage
VDC
20
30
35
40
V
Average forward
current
IF(AV)
TC ≤ 125
oC
400
400
400
400
A
Non-repetitive
forward surge
current, half sine-
wave
IFSM
TC = 25
oC
tp = 8.3 ms
3000
3000
3000
3000
A
Electrical Characteristics (TJ = 25
oC unless otherwise specified)
Parameter
Symbol
Conditions
MBR40020CT
(R)
MBR40030CT
(R)
MBR40035CT
(R)
MBR40040CT
(R)
Units
DC forward voltage
VF
IF = 200 A
TJ = 25
oC
0.68
0.68
0.68
0.68
V
DC reverse current
IR
VR = 20 V
TJ = 25
oC
5
5
5
5
mA
VR = 20 V
TJ = 125
oC
200
200
200
200
Thermal Characteristics (TJ = 25
oC unless otherwise specified)
Parameter
Symbol
MBR40020CT
(R)
MBR40030CT
(R)
MBR40035CT
(R)
MBR40040CT
(R)
Units
Thermal resistance
junction to case
RthJ-C
0.35
0.35
0.35
0.35
oC/W
Operating, storage
temperature range
TJ , Tstg
- 40 to +175
- 40 to +175
- 40 to +175
- 40 to +175
oC
TWIN TOWER PACKAGE


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