AOL1401 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOL1401

Symbol

Min

Typ

Max

Units

BVDSS

-38

-100

TJ=55°C

-500

±1

µA

±10

µA

VGS(th)

-1.5

-2.2

-3.5

ID(ON)

-120

6.8

8.5

TJ=125°C

9.1

7.9

Ω

gFS

VSD

0.71

-1

14.5

Ciss

3800

4560

Coss

560

Crss

350

7.5

Ω

Qg(10V)

61.2

Qgs

11.88

Qgd

15.4

tD(on)

13.5

tD(off)

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs

VGS=-20V, ID=-20A

Reverse Transfer Capacitance

IF=-20A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

Gate resistance

VGS=0V, VDS=0V, f=1MHz

On state drain current

ID=-250µA, VGS=0V

VGS=-10V, VDS=-5V

Gate-Body leakage current

VDS=0V, VGS=±25V

IGSS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

Forward Transconductance

Diode Forward Voltage

IDSS

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-30V, VGS=0V

VDS=0V, VGS=±20V

Zero Gate Voltage Drain Current

Turn-Off Fall Time

SWITCHING PARAMETERS

Gate Source Charge

Ω

VGS=-10V, ID=-20A

IS=-1A,VGS=0V

VDS=-5V, ID=-20A

RDS(ON)

Static Drain-Source On-Resistance

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=-20V, f=1MHz

Gate Drain Charge

Total Gate Charge (10V)

VGS=-10V, VDS=-20V, ID=-20A

VGS=-10V, VDS=-20V, RL=1Ω,

RGEN=3Ω

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on

the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

* This device is guaranteed green after date code 8P11 (June 1

ST 2008)

Rev 2: Dec 2008

Alpha & Omega Semiconductor, Ltd.

AOL1401 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

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