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AON2802 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON2802 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page ![]() AON2802 30V Dual N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 2A RDS(ON) (at VGS=10V) < 60m Ω RDS(ON) (at VGS=4.5V) < 68m Ω RDS(ON) (at VGS=2.5V) < 88m Ω Typical ESD protection HBM Class 3A Symbol The AON2802 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 30V G1 D 1 S1 G2 D2 S2 DFN 2x2A Top View Bottom View Pin 1 Pin 1 S1 G1 D2 D1 D1 D2 S2 G2 Symbol VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State Power Dissipation B PD Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Ambient A D 100 °C/W RθJA 50 80 60 TA=25°C W 2.1 1.3 TA=70°C V ±12 Gate-Source Voltage TA=25°C TA=70°C A ID 2 1.6 8 Pulsed Drain Current C Continuous Drain Current G V Maximum Units Parameter Drain-Source Voltage 30 °C Thermal Characteristics Units Parameter Typ Max Junction and Storage Temperature Range -55 to 150 Rev 0: Sep. 2012 www.aosmd.com Page 1 of 5 |
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