AON2803 datasheet(2/5 Pages) AOSMD

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AON2803

Symbol

Min

Typ

Max

Units

BVDSS

-20

VDS=-20V, VGS=0V

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

Gate Threshold Voltage

-0.4

-0.6

-1

ID(ON)

-20

TJ=125°C

Ω

115

Ω

gFS

VSD

-0.66

-1

-2

Ciss

560

Coss

Crss

Ω

8.5

Qgs

1.2

Qgd

2.1

tD(on)

7.2

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-4.5V, VDS=-5V

VGS=-4.5V, ID=-3.8A

Forward Transconductance

Diode Forward Voltage

SWITCHING PARAMETERS

IS=-1A,VGS=0V

VDS=-5V, ID=-3.8A

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Reverse Transfer Capacitance

VGS=0V, VDS=-10V, f=1MHz

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

RDS(ON)

Static Drain-Source On-Resistance

IDSS

µA

VDS=VGS, ID=-250µA

VDS=0V, VGS=±8V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Ω

VGS=-1.8V, ID=-2A

VGS=-2.5V, ID=-3A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

=-4.5V, V =-10V, R =2.6

Ω,

VGS=-4.5V, VDS=-10V, ID=-3.8A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

tD(off)

trr

Qrr

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=-4.5V, VDS=-10V, RL=2.6Ω,

RGEN=3Ω

Turn-Off Fall Time

IF=-3.8A, dI/dt=100A/µs

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C.

B. The value of R θJA is measured with the device mounted on a minimum pad board. Copper, in a still air environment with T A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C.

C. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev 0: August 2012

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