AON4701 datasheet(2/5 Pages) AOSMD

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AON4701

Symbol

Min

Typ

Max

Units

BVDSS

-20

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

-0.3

-0.63

-1

ID(ON)

-15

TJ=125°C

102

125

120

Ω

123

160

Ω

gFS

VSD

-0.83

-1

-2

Ciss

540

Coss

Crss

Ω

6.1

Qgs

0.6

Qgd

1.6

tD(on)

tD(off)

trr

Qrr

7.5

SCHOTTKY PARAMETERS

0.39

0.5

0.1

trr

5.2

Qrr

0.8

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

SchottkyReverse Recovery Time

IF=1A, dI/dt=100A/µs

Schottky Reverse Recovery Charge

IF=1A, dI/dt=100A/µs

VR=16V, TJ=125°C

Junction Capacitance

VR=10V

Forward Voltage Drop

IF=0.5A

Irm

Maximum reverse leakage current

VR=16V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-1.8V, ID=-1.5A

VGS=-4.5V, VDS=-5V

VGS=-4.5V, ID=-3.4A

Reverse Transfer Capacitance

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=-250µA

VDS=-16V, VGS=0V

VDS=0V, VGS=±8V

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Ω

VGS=-2.5V, ID=-2.5A

IS=-1A,VGS=0V

VDS=-5V, ID=-3.4A

IF=-3.8A, dI/dt=100A/µs

VGS=0V, VDS=-10V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=-4.5V, VDS=-10V, ID=-3.8A

Gate Source Charge

Gate Drain Charge

Turn-On Rise Time

Turn-Off DelayTime

VGS=-4.5V, VDS=-10V, RL=2.6Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Rev 0. December 2005

Alpha & Omega Semiconductor, Ltd.

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