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ADG439F Datasheet(PDF) 2 Page - Analog Devices

Part # ADG439F
Description  High Performance 4/8 Channel Fault-Protected Analog Multiplexers
PDF  8 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADG439F Datasheet(HTML) 2 Page - Analog Devices

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–2–
REV. D
ADG438F/ADG439F–SPECIFICATIONS1
Dual Supply
B Version
–40 C to
–40 C to
Parameter
+25 C
+85 C
+105 C
Units
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VSS + 1.2
VSS + 1.2
V min
VDD – 0.8
VDD – 0.8
V max
RON
400
400
Ω max
–10 V < VS < +10 V, IS = 1 mA;
∆R
ON
5
5
% max
–5 V < VS < +5 V, IS = 1 mA;
RON Drift
0.6
%/
°C typ
VS = 0 V, IS = 1 mA
RON Match
3
3
3
% max
VS = ± 10 V, IS = 1 mA
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
±0.01
nA typ
VD = ± 10 V, VS =
10 V;
±0.5
±2
±5
nA max
Test Circuit 2
Drain OFF Leakage ID (OFF)
±0.01
nA typ
VD = ± 10 V, VS =
10 V;
ADG438F
±0.5
±5
±30
nA max
Test Circuit 3
ADG439F
±0.5
±5
±15
nA max
Channel ON Leakage ID, IS (ON)
±0.01
nA typ
VS = VD = ± 10 V;
ADG438F
±0.5
±5
±30
nA max
Test Circuit 4
ADG439F
±0.5
±5
±15
nA max
FAULT
Output Leakage Current
±0.02
nA typ
VS = –33 V, +33 V or +50 V, VD = 0 V, Test Circuit 3
(With Overvoltage)
±0.1
±2
±10
µA max
Input Leakage Current
±0.005
µA typ
VS = ± 25 V, VD =
10 V, Test Circuit 5
(With Overvoltage)
±0.1
±1
±2
µA max
Input Leakage Current
±0.001
µA typ
VS = ± 25 V, VD = VEN = A0, A1, A2 = 0 V
(With Power Supplies OFF)
±0.1
±1
±4
µA max
Test Circuit 6
DIGITAL INPUTS
Input High Voltage, VINH
2.4
2.4
V min
Input Low Voltage, VINL
0.8
0.8
V max
Input Current
IINL or IINH
±1
±1
µA max
VIN = 0 or VDD
CIN, Digital Input Capacitance
5
pF typ
DYNAMIC CHARACTERISTICS2
tTRANSITION
170
ns typ
RL = 1 MΩ, CL = 35 pF;
220
300
320
ns max
VS1 = ± 10 V, VS8 =
10 V; Test Circuit 7
tOPEN
10
10
10
ns min
RL = 1 kΩ, CL = 35 pF;
VS = +5 V; Test Circuit 8
tON (EN)
200
ns typ
RL = 1 kΩ, CL = 35 pF;
250
300
300
ns max
VS = +5 V; Test Circuit 9
tOFF (EN)
110
ns typ
RL = 1 kΩ, CL = 35 pF;
150
180
180
ns max
VS = +5 V; Test Circuit 9
tSETT, Settling Time
0.1%
0.5
0.5
µs typ
RL = 1 kΩ, CL = 35 pF;
0.01%
1.7
1.7
µs typ
VS = +5 V
Charge Injection
4
pC typ
VS =0 V, RS =0 Ω,CL= 1 nF; Test Circuit 10
OFF Isolation
80
dB typ
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
VS = 7 V rms; Test Circuit 11
Channel-to-Channel Crosstalk
85
dB typ
RL = 1 kΩ, CL = 15 pF, f = 100 kHz;
VS = 7 V rms; Test Circuit 12
CS (OFF)
5
pF typ
CD (OFF)
ADG438F
50
pF typ
ADG439F
25
pF typ
POWER REQUIREMENTS
IDD
0.05
mA typ
VIN = 0 V or 5 V
0.15
0.25
0.25
mA max
ISS
0.01
mA typ
0.02
0.04
0.04
mA max
NOTES
1Temperature range is as follows: B Version: –40
°C to +105°C.
2Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
(VDD = +15 V, VSS = –15 V, GND = 0 V, unless otherwise noted)



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