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HER501 Datasheet(PDF) 1 Page - DIOTEC Electronics Corporation |
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HER501 Datasheet(HTML) 1 Page - DIOTEC Electronics Corporation |
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1 / 2 page ![]() HER501 THRU HER508 HIGH EFFICIENT SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 5.0 Ampere MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Case: JEDEC DO-201AD molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.04 ounce, 1.10 grams The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Ultra fast switching for high efficiency Low reverse leakage High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension FEATURES MECHANICAL DATA Dimensions in inches and (millimeters) DO-201AD 0.220(5.6) 0.197(5.0) DIA. 0.052(1.3) 0.048(1.2) DIA. 1.0 (25.4) MIN. 0.375(9.5) 0.285(7.2) 1.0 (25.4) MIN. ● ● ● ● ● Characteristic Symbol HER 501 HER 502 HER 503 HER 504 HER 505 HER 506 HER 507 HER 508 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 300 400 600 800 1000 V V e g a tl o V e s r e v e R S M R R(RMS) 35 70 140 210 280 420 560 700 V Average Rectified Output Current (Note 1) @TA = 55°C IO A 0 . 5 Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM A 0 5 1 Forward Voltage @IF = 5.0A VFM 1.0 1.3 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 10 100 µA Reverse Recovery Time (Note 2) trr S n 5 7 0 5 Typical Junction Capacitance (Note 3) Cj F p 0 5 5 7 T e g n a R e r u t a r e p m e T g n it a r e p O j C ° 50 1 + o t 5 6 - T e g n a R e r u t a r e p m e T e g a r o t S STG C ° 0 5 1 + o t 5 6 - Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. |
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