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ADG779 Datasheet(PDF) 1 Page - Analog Devices |
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ADG779 Datasheet(HTML) 1 Page - Analog Devices |
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1 / 8 page ![]() REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a ADG779 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2001 CMOS 1.8 V to 5.5 V, 2.5 SPDT Switch/2:1 Mux In Tiny SC70 Package FUNCTIONAL BLOCK DIAGRAM IN ADG779 S2 S1 D SWITCHES SHOWN FOR A LOGIC "1" INPUT FEATURES 1.8 V to 5.5 V Single Supply 2.5 On Resistance 0.75 On-Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SC70 Package Fast Switching Times tON 20 ns tOFF 6 ns Typical Power Consumption (<0.01 W) TTL/CMOS-Compatible APPLICATIONS Battery-Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement GENERAL DESCRIPTION The ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submi- cron process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. The ADG779 operates from a single supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instru- ments and with the new generation of DACs and ADCs from Analog Devices. Each switch of the ADG779 conducts equally well in both directions when on. The ADG779 exhibits break-before-make switching action. Because of the advanced submicron process, –3 dB bandwidth of greater than 200 MHz can be achieved. The ADG779 is available in a 6-lead SC70 package. PRODUCT HIGHLIGHTS 1. Tiny 6-Lead SC70 Package. 2. 1.8 V to 5.5 V Single Supply Operation. The ADG779 offers high performance, including low on resistance and fast switching times, and is fully specified and guaranteed with 3 V and 5 V supply rails. 3. Very Low RON (5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V operation, RON is typically 40 Ω over the temperature range. 4. On-Resistance Flatness (RFLAT(ON)) (0.75 Ω typ). 5. –3 dB Bandwidth >200 MHz. 6. Low Power Dissipation. CMOS construction ensures low power dissipation. 7. 14 ns Switching Times. |
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