REV. 0

ADM1051/ADM1051A

–3–

ABSOLUTE MAXIMUM RATINGS

*

°C unless otherwise noted)

SHDN1, SHDN2 to GND . . . . . . . . –0.3 V to (V

SENSE 1, SENSE 2 to GND . . . . . . . . . . . –0.3 V to +5.5 V

°C) . . . . . . . 650 mW

8-Lead SOIC (Derate 8.3 mW/

°C Above 70°C)

Operating Temperature Range

Commercial (J Version) . . . . . . . . . . . . . . . . . . 0

°C to 70°C

Storage Temperature Range . . . . . . . . . . .

–65

°C to +150°C

Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300

°C

*This is a stress rating only; functional operation of the device at these or any other

conditions above those indicated in the operation sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended

periods of time may affect reliability.

THERMAL CHARACTERISTICS

8-Lead Small Outline Package:

ORDERING GUIDE

Temperature

Package

Package

Model

Range

Description

Option

ADM1051JR

0

°C to 70°C

8-Lead SOIC

R-8

ADM1051AJR

0

°C to 70°C

8-Lead SOIC

R-8

PIN FUNCTION DESCRIPTIONS

Pin

No.

Mnemonic

Function

1

FORCE 2

Output of Channel 2 control amplifier

to gate of external N-channel MOSFET.

2

SENSE 2

Input from source of external MOSFET

to inverting input of Channel 2 control

amplifier, via output voltage-setting

feedback resistor network.

3

SHDN2

Digital Input. Active-low shutdown

control with 50

µA internal pull-up. The

output of Channel 2 control amplifier goes

to ground when

SHDN2 is taken low.

4

GND

Device Ground Pin.

5

SHDN1

Digital Input. Active-low shutdown con-

trol with 50

µA internal pull-up. See text for

more details of

SHDN1 functionality.

6

SENSE 1

Input from source of external MOSFET to

inverting input of Channel 1 control ampli-

fier, via output voltage-setting feedback

resistor network.

7

FORCE 1

Output of Channel 1 control amplifier to

gate of external N-channel MOSFET.

12 V Supply.

SHDN1

ADM1051/

ADM1051A

SHDN2

1 F

LEAVE OPEN OR

CONNECT TO

LOGIC SIGNALS

IF SHUTDOWN

REQUIRED

PHD55N03LT

FORCE 2

SENSE 2

100 F

2 100 F

FORCE 1

SENSE 1

3.3V

12V

MTD3055VL

100 F

2 100 F

3.3V

Figure 1. Test Circuit

PIN CONFIGURATION

TOP VIEW

(Not to Scale)

8

7

6

5

1

2

3

4

FORCE 2

SENSE 2

SHDN2

FORCE 1

SENSE 1

SHDN1

GND

ADM1051/

ADM1051A

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the ADM1051/ADM1051A features proprietary ESD protection circuitry, permanent

damage may occur on devices subjected to high-energy electrostatic discharges. Therefore,

proper ESD precautions are recommended to avoid performance degradation or loss of

functionality.

WARNING!

ESD SENSITIVE DEVICE