AON7516 datasheet(2/6 Pages) AOSMD

2 / 6 page

AON7516

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

1.2

1.8

2.2

3.7

4.5

TJ=125°C

5.3

6.5

5.3

6.8

Ω

gFS

VSD

0.7

Ciss

1229

Coss

526

Crss

0.8

1.7

2.6

Ω

Qg(10V)

Qg(4.5V)

Qgs

Qgd

5.5

tD(on)

7.0

4.8

24.0

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

Gate Source Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IS=1A,VGS=0V

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

Ω

ID=250µA, VGS=0V

VGS=10V, ID=20A

Gate-Body leakage current

VDS=VGS, ID=250µA

VDS=0V, VGS= ±20V

SWITCHING PARAMETERS

Turn-On DelayTime

Gate Drain Charge

Total Gate Charge

VGS=10V, VDS=15V, ID=20A

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

Ω

Forward Transconductance

VDS=5V, ID=20A

DYNAMIC PARAMETERS

VGS=4.5V, ID=20A

RDS(ON)

Static Drain-Source On-Resistance

Diode Forward Voltage

Reverse Transfer Capacitance

VGS=0V, VDS=15V, f=1MHz

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

tD(off)

24.0

5.8

trr

12.6

Qrr

15.2

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off Fall Time

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/µs

Turn-Off DelayTime

RGEN=3Ω

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

J(MAX)=150°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev0: Oct 2011

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