AON7752 datasheet(2/6 Pages) AOSMD

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AON7752

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

0.5

TJ=55°C

100

IGSS

±100

VGS(th)

Gate Threshold Voltage

1.5

2.5

6.8

8.2

TJ=125°C

9.8

11.6

14.5

Ω

gFS

VSD

0.45

0.65

Ciss

605

Coss

275

Crss

36.5

Ω

Qg(10V)

Qg(4.5V)

5.5

Qgs

Qgd

2.6

tD(on)

2.5

VDS=VGS，ID=250µA

Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=10mA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

Gate-Body leakage current

VDS=0V, VGS= ±20V

DYNAMIC PARAMETERS

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=16A

Ω

VGS=4.5V, ID=10A

Forward Transconductance

VDS=5V, ID=16A

Diode Forward Voltage

IS=0.2A,VGS=0V

Maximum Body-Diode Continuous Current

Input Capacitance

VGS=0V, VDS=15V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=15V, ID=16A

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

VGS=10V, VDS=15V, RL=0.9Ω,

Ω

Turn-On Rise Time

Turn-Off DelayTime

tD(off)

trr

11.5

Qrr

12.5

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=16A, dI/dt=500A/µs

RGEN=3Ω

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=16A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature T

J(MAX)=150°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev 0 : April 2012

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