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AOB286L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOB286L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 70A RDS(ON) (at VGS=10V) < 6.0m Ω (< 5.7mΩ∗) RDS(ON) (at VGS=6V) < 7.9m Ω (< 7.6mΩ∗) 100% UIS Tested 100% Rg Tested Symbol Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 80V The AOT286L/AOB286L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Maximum Units G D S TO220 Top View Bottom View G G S D D S D D TO-263 D2PAK Top View Bottom View D D S G G S Symbol VDS VGS IDM IAS EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 Units Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Parameter Typ Max Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 0.7 60 0.9 W Power Dissipation A PDSM W TA=70°C 167 1.3 TA=25°C TC=25°C 2.1 83 TC=100°C Power Dissipation B PD TA=70°C ID 70 55 TC=25°C TC=100°C 245 Pulsed Drain Current C Continuous Drain Current G Parameter mJ Avalanche Current C 10.5 Continuous Drain Current 125 13 A 50 Avalanche energy L=0.1mH C A TA=25°C IDSM A Maximum Junction-to-Ambient A °C/W RθJA 12 48 15 V ±20 Gate-Source Voltage Drain-Source Voltage 80 V Maximum Units Rev 0: Nev. 2012 www.aosmd.com Page 1 of 6 |
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