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AOB296L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOB296L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 70A RDS(ON) (at VGS=10V) < 10m Ω (< 9.7mΩ∗) RDS(ON) (at VGS=6V) < 12.5m Ω (< 12.2mΩ∗) 100% UIS Tested 100% Rg Tested Symbol The AOT296L/AOB296L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 100V G D S TO220 Top View Bottom View G G S D D S D D TO-263 D2PAK Top View Bottom View D D S G G S Symbol VDS VGS IDM IAS EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 Maximum Junction-to-Ambient A °C/W RθJA 12 48 15 V ±20 Gate-Source Voltage Drain-Source Voltage 100 V Maximum Units Parameter mJ Avalanche Current C 7.5 Continuous Drain Current 80 9.5 A 40 Avalanche energy L=0.1mH C A TA=25°C IDSM A TA=70°C ID 70 50 TC=25°C TC=100°C 180 Pulsed Drain Current C Continuous Drain Current G W Power Dissipation A PDSM W TA=70°C 107 1.3 TA=25°C TC=25°C 2.1 54 TC=100°C Power Dissipation B PD Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 1.1 60 1.4 Units Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Parameter Typ Max Prelim: Sep. 2012 www.aosmd.com Page 1 of 6 |
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