AOT414 datasheet(2/7 Pages) AOSMD

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AOT414

Symbol

Min

Typ

Max

Units

BVDSS

100

VDS=100V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

3.3

ID(ON)

100

20.5

TJ=125°C

Ω

gFS

VSD

0.66

Ciss

1400

1770

2200

Coss

115

165

214

Crss

0.3

0.65

1.0

Ω

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

VGS=0V, VDS=50V, f=1MHz

SWITCHING PARAMETERS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

VDS=VGS ID=250µA

VDS=0V, VGS= ±25V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

Ω

IS=1A,VGS=0V

VDS=5V, ID=20A

VGS=7V, ID=15A

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

Qg(10V)

Qgs

Qgd

tD(on)

tD(off)

trr

Qrr

trr

Qrr

110

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

IF=20A, dI/dt=100A/µs

SWITCHING PARAMETERS

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=50V, ID=20A

Gate Source Charge

Gate Drain Charge

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=50V, RL=2.5Ω,

RGEN=3Ω

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 175°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175

C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large

heatsink, assuming a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25

Rev 1: May 2012

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