1

Motorola Bipolar Power Transistor Device Data

Darlington Complementary

Silicon Power Transistors

. . . designed for general–purpose amplifier and low–speed switching motor control

applications.

• Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285,

2N6286, 2N6287

• Rugged RBSOA Characteristics

• Monolithic Construction with Built–in Collector–Emitter Diode

MAXIMUM RATINGS

Rating

Symbol

MJH6282

MJH6285

MJH6283

MJH6286

MJH6284

MJH6287

Unit

Collector–Emitter Voltage

VCEO

60

80

100

Vdc

Collector–Base Voltage

VCB

60

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

Peak

IC

20

40

Adc

Base Current

IB

0.5

Adc

Total Device Dissipation @

TC = 25_C

Derate above 25

_C

PD

160

1.28

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.78

_C/W

160

0

TC, CASE TEMPERATURE (°C)

50

75

125

150

200

100

175

25

Figure 1. Power Derating

0

20

40

60

80

100

140

120

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJH6282/D

MJH6282

MJH6283

MJH6284

MJH6285

MJH6286

MJH6287

DARLINGTON

20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60, 80, 100 VOLTS

160 WATTS

*Motorola Preferred Device

*

NPN

PNP

*

*

*

CASE 340D–01