AOW480 datasheet(2/7 Pages) AOSMD

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AOW480

Symbol

Min

Typ

Max

Units

BVDSS

VDS=80V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

2.8

ID(ON)

500

3.7

4.5

TJ=125°C

6.1

7.3

4.2

5.5

Ω

gFS

VSD

0.6

180

Ciss

5200

6520

7820

Coss

570

810

1060

Crss

185

310

430

0.3

0.64

Ω

Qg(10V)

116

140

Qgs

Qgd

tD(on)

31.5

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

=10V, V =40V, R =2

Ω,

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=10V, VDS=40V, ID=20A

Gate Source Charge

RDS(ON)

Ω

IS=1A,VGS=0V

VDS=5V, ID=20A

VGS=7V, ID=20A

Diode Forward Voltage

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Zero Gate Voltage Drain Current

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VGS=10V, ID=20A

Reverse Transfer Capacitance

VGS=0V, VDS=40V, f=1MHz

SWITCHING PARAMETERS

VDS=5V ,ID=250µA

VDS=0V, VGS= ±25V

Gate-Body leakage current

Forward Transconductance

Static Drain-Source On-Resistance

Gate Drain Charge

tD(off)

17.5

trr

Qrr

132

170

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=40V, RL=2Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current is package limited .

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev0: July 2011

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