BUF04GS datasheet(3/16 Pages) AD

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ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Conditions

Min

Typ

Max

Units

INPUT CHARACTERISTICS

Offset Voltage

VOS

0.8

2.0

–40

°C ≤ T

A ≤ +85°C

1.0

Input Bias Current

VCM = 0 V

0.15

µA

–40

°C ≤ T

≤ +85°C

1.6

µA

Input Voltage Range

VCM

±3.0

Offset Voltage Drift

∆V

OS/

∆T30

µV/°C

Offset Null Range

±25

OUTPUT CHARACTERISTICS

Output Voltage Swing

RL = 150

Ω,

±3.0

–40

°C ≤ T

A ≤ +85°C

±2.75

±3.00

RL = 2 k

Ω,

±3.0

±3.6

–40

°C ≤ T

≤ +85°C

±3.0

±3.35

Output Current - Continuous

IOUT

±40

Peak Output Current

IOUTP

Note 2

±75

TRANSFER CHARACTERISTICS

Gain

AVCL

RL = 2 k

Ω,

0.995

0.9977

1.005

V/V

–40

°C ≤ T

A ≤ +85°C

0.995

1.005

V/V

Gain Linearity

RL = 1 k

Ω

0.005

POWER SUPPLY

Power Supply Rejection Ratio

PSRR

VS =

±4.5 V to ±18 V

–40

°C ≤ T

≤ +85°C76

Supply Current

ISY

VO = 0 V, RL = ∞

6.60

–40

°C ≤ T

≤ +85°C

6.70

DYNAMIC PERFORMANCE

Slew Rate

RL = 2 k

Ω, C

L = 70 pF

2000

µs

Bandwidth

–3 dB, CL = 20 pF, RL =

∞

100

MHz

Bandwidth

–3 dB, CL = 20 pF, RL = 1 kΩ

100

MHz

Bandwidth

–3 dB, CL = 20 pF, RL = 150

Ω

100

MHz

Differential Phase

f = 3.58 MHz, RL = 150

Ω

0.13

Degrees

f = 4.43 MHz, RL = 150 Ω

0.15

Degrees

Differential Gain

f = 3.58 MHz, RL = 150

Ω

0.04

f = 4.43 MHz, RL = 150

Ω

0.06

NOISE PERFORMANCE

Voltage Noise Density

f = 1 kHz

nV/

√Hz

Current Noise Density

f = 1 kHz

pA/

√Hz

NOTE

1Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125

°C, with an LTPD of 1.3.

Specifications subject to change without notice.

(@ VS =

5.0 V, TA = +25 C unless otherwise noted)

BUF04

REV. 0

–3–

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