OP191/OP291/OP491

REV. 0

–5–

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite

Storage Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Operating Temperature Range

OP191/OP291/OP491G . . . . . . . . . . . . . . . –40

°C to +125°C

Junction Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300

°C

Package Type

θ

JA

2

θ

JC

Units

8-Pin Plastic DIP (P)

103

43

°C/W

8-Pin SOIC (S)

158

43

°C/W

14-Pin Plastic DIP (P)

76

33

°C/W

14-Pin SOIC (S)

120

36

°C/W

14-Pin TSSOP (RU)

180

35

°C/W

NOTES

otherwise noted.

2

θ

for P-DIP packages;

θ

and SOIC packages.

WAFER TEST LIMITS

Parameter

Symbol

Conditions

Limit

Units

Offset Voltage

±300

µV max

Input Bias Current

50

nA max

Input Offset Current

8nA

Input Voltage Range

V– to V+

V min

Common-Mode Rejection Ratio

CMRR

70

dB min

Power Supply Rejection Ratio

PSRR

V = 2.7 V to +12 V

80

dB min

Large Signal Voltage Gain

Ω

50

V/mV min

Output Voltage High

Ω to GND

2.8

V min

Output Voltage Low

75

mV max

Supply Current/Amplifier

∞

350

µA max

NOTE

Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard

product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

ORDERING GUIDE

Temperature

Package

Package

Model

Range

Description

Option

OP191GP

–40

°C to +125°C 8-Pin Plastic DIP N-8

OP191GS

–40

°C to +125°C 8-Pin SOIC

SO-8

OP191GBC

+25

°C

DICE

OP291GP

–40

°C to +125°C 8-Pin Plastic DIP N-8

OP291GS

–40

°C to +125°C 8-Pin SOIC

SO-8

OP291GBC

+25

°C

DICE

OP491GP

–40

°C to +125°C 14-Pin Plastic DIP N-14

OP491GS

–40

°C to +125°C 14-Pin SOIC

SO-14

OP491HRU

–40

°C to +125°C 14-Pin TSSOP

RU-14

OP491GBC

+25

°C

DICE

2

3

4

6

7

OP191 Die Size 0.047

× 0.066 Inch,

3,102 Sq. Mils. Substrate (Die Back-

side) Is Connected to V+.

Transistor Count, 74.

2

1

2

1

8

7

6

5

4

3

8

7

6

5

4

3

2

1

8

7

6

5

4

3

OP291 Die Size 0.070

× 0.070 Inch,

4,900 Sq. Mils. Substrate (Die Back-

side) Is Connected to V+.

Transistor Count, 146

DICE CHARACTERISTICS

2

1

14

13

12

11

10

9

8

7

6

5

4

3

OP491 Die Size 0.070

× 0.110 Inch,

7,700 Sq. Mils. Substrate (Die Back-

side) Is Connected to V+.

Transistor Count, 290.