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STP210N75F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP210N75F6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() May 2011 Doc ID 018507 Rev 1 1/13 13 STP210N75F6 N-channel 75 V, 3 m Ω, 120 A TO-220 STripFET™ VI DeepGATE™ Power MOSFET Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Application Switching applications Description This product is a 75 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STP210N75F6 75 V < 3.7 m Ω 120 A TO-220 1 2 3 Table 1. Device summary Order code Marking Package Packaging STP210N75F6 210N75F6 TO-220 Tube www.st.com |
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