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APT100GF60LR Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT100GF60LR Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() TO-264 (LR) G C E T-Max™ (B2R) G C E MIN TYP MAX 600 -15 4.5 5.5 6.5 2.2 2.7 2.8 3.4 1.0 TBD ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA) Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) Symbol BVCES RBVCES VGE(TH) VCE(ON) ICES IGES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS UNIT Volts mA nA Symbol VCES VCGR VEC VGE IC1 IC2 ICM1 ICM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20KΩ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current 5 @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current 1 @ TC = 25°C Pulsed Collector Current 1 @ TC = 90°C Single Pulse Avalanche Energy 2 Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT100GF60B2R/LR 600 600 15 ±20 100 100 280 200 85 390 -55 to 150 300 UNIT Volts Amps mJ Watts °C APT100GF60B2R APT100GF60LR 600V 100A APT100GF60B2R APT100GF60LR CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com Fast IGBT G C E The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated • RBSOA and SCSOA Rated |
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