APT60GT60JR datasheet(2/2 Pages) ADPOW

2 / 2 page

Symbol

Cies

Coes

Cres

Qge

Qgc

td(on)

td(off)

td(on)

td(off)

Eon

Eoff

Ets

td(on)

td(off)

Ets

gfe

DYNAMIC CHARACTERISTICS

APT60GT60JR

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy

Turn-off Switching Energy

Total Switching Losses

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Total Switching Losses

Forward Transconductance

Test Conditions

Capacitance

VGE = 0V

VCE = 25V

f = 1 MHz

Gate Charge

VGE = 15V

VCC = 0.66VCES

IC = IC2

Resistive Switching (25°C)

VGE = 15V

VCC = 0.66VCES

IC = IC2

RG = 5W

Inductive Switching (150°C)

VCLAMP(Peak) = 0.66VCES

VGE = 15V

IC = IC2

RG = 5W

TJ = +150°C

Inductive Switching (25°C)

VCLAMP(Peak) = 0.66VCES

VGE = 15V

IC = IC2

RG = 5W

TJ = +25°C

VCE = 20V, IC = IC2

MIN

TYP

MAX

3200

310

180

280

120

190

140

300

1.9

2.4

4.3

260

3.8

UNIT

°C/W

lb•in

N•m

MIN

TYP

MAX

0.33

1.03

29.2

1.5

Characteristic

Junction to Case

Junction to Ambient

Package Weight

Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)

Symbol

RQJC

RQJA

Torque

THERMAL AND MECHANICAL CHARACTERISTICS

Repetitive Rating: Pulse width limited by maximum junction temperature.

C = IC2, RGE = 25

W, L = 100µH, T

j = 25°C

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

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