PRELIMINARY

MAXIMUM RATINGS

All Ratings: T

C

= 25°C unless otherwise specified.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

V

DS

(ON)

I

DSS

I

GSS

g

fs

V

GS

(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250 µA)

D

(ON) = 7.5A, V

GS

= 10V)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 0.8 V

DSS

, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Forward Transconductance (V

DS

= 25V, I

D

= 7.5A)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 50mA)

MIN

TYP

MAX

200

3.0

25

250

±100

2

3.5

5

35

UNIT

Volts

µA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

T

J

,T

STG

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

C

= 25°C

Gate-Source Voltage

Total Power Dissipation @ T

C

= 25°C

Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF464A/B

200

200

15

±30

180

0.70

-55 to 150

300

UNIT

Volts

Amps

Volts

Watts

°C/W

°C

RF POWER MOSFETs

N - CHANNEL ENHANCEMENT MODE

65V

100W

100MHz

The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for push-

pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

optimized for both linear and high efficiency classes of operation.

•

Output Power = 100 Watts.

•

Gain = 13dB (Class AB)

•

Efficiency = 75% (Class C)

TO-247

ARF464A

ARF464B

G

D

S

Common

Source

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

Bend, Oregon 97702 -1035

Phone: (541) 382-8028

FAX: (541) 388-0364

EUROPE

Chemin de Magret

F-33700 Merignac - France

Phone: (33) 5 57 92 15 15

FAX: (33) 5 56 47 97 61