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SWDB05V Datasheet(PDF) 5 Page - Seoul Semiconductor

Part # SWDB05V
Description  Side View LED of Reflector type
PDF  19 Pages
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Manufacturer  SEOUL [Seoul Semiconductor]
Direct Link  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

SWDB05V Datasheet(HTML) 5 Page - Seoul Semiconductor

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APCPCWM_4828539:WP_0000001WP_0000001
Rev. 00
Rev. 00
October, 2012
October, 2012
www.acrich.com
www.acrich.com
Document No. : QP-7-07-18 (Rev.00) 공통_을
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2. Absolute maximum ratings
Parameter
Symbol
Value
Unit
Power Dissipation
P
d
*1
90
mW
DC Forward Current
I
F
30
mA
Peak Forward Current
I
FM
*2
100
mA
Reverse Voltage
V
R
5
V
Operating Temperature
T
opr
-30 ~ +85
ºC
Storage Temperature
T
stg
-40 ~ +100
ºC
Junction Temperature
Tj max
105
ºC
*1 Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
*2 I
FM was measured at TW ≤ 0.1msec of pulse width and D ≤ 1/10 of duty ratio.
3. Electro-Optical characteristics
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Forward
Voltage*1
Rank Z26
V
F
I
F =20mA
2.6
-
2.8
V
Rank Z28
2.8
-
3.0
Reverse Voltage
V
R
I
R= 3A
0.6
0.9
V
Luminous
Intensity*2
Rank S24H
I
V
I
F =20mA
2400
-
2500
mcd
Rank S25H
2500
-
2600
Rank S26H
2600
-
2700
Rank S27H
2700
-
2800
Rank S28H
2800
-
2900
Rank S29H
2900
-
3000
Rank S30H
3000
-
3100
Viewing Angle *3
2
½
I
F =20mA
120
deg.
Thermal Resistance
Rth(j-s)*4
140
ºC/W
Electro-Static Discharge Threshold
ESD
(HBM)
±5,000
V
(T
a = 25℃)
(T
a = 25℃)
*1 Forward voltage measurement allowance is ±0.1V
*2 The luminous intensity I
V is measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of
the LED package. Luminous Intensity Measurement allowance is ±10%.
*3 2
1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.



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