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STTH60W02C Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH60W02C Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STTH60W02C 4/8 Doc ID 023073 Rev 1 Figure 5. Reverse recovery time versus dIF/dt (typical values, per diode) Figure 6. Reverse recovery charges versus dIF/dt (typical values, per diode) trr(ns) 0 10 20 30 40 50 60 70 80 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=160 V Tj=125 °C dIF/dt(A/µs) QRR(nC) 0 100 200 300 400 500 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=160 V Tj=125 °C dIF/dt(A/µs) Figure 7. Reverse recovery softness factor versus dIF/dt (typical values, per diode) Figure 8. Relative variation of dynamic parameters versus junction temperature S factor 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=160 V Tj=125 °C dIF/dt(A/µs) Tj(°C) 0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 IF=IF(AV) VR=160 V Reference: Tj=125 °C IRM SFACTOR QRR Figure 9. Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) VFP(V) 0 1 2 3 4 150 200 250 300 350 400 450 500 IF=IF(AV) Tj=125 °C dIF/dt(A/µs) tfr(ns) 0 20 40 60 80 100 120 140 160 150 200 250 300 350 400 450 500 IF=IF(AV) VFR=1.1 V Tj=125 °C dIF/dt(A/µs) |
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