2

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)(d)

143

°C/W

Junction to Ambient (b)(d)

100

°C/W

Junction to Ambient (a)(e)

120

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t 10 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

(d) For device with one active die.

(e) For device with two active die running at equal power.

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

N-CHANNEL

P-CHANNEL

UNIT

Drain-Source Voltage

20

-20

V

Gate- Source Voltage

± 12

V

2.4

1.9

-1.7

-1.35

A

Pulsed Drain Current (c)(d)

19

-9.6

A

Continuous Source Current (Body Diode)(b)(d)

-1.5

-1.4

A

Pulsed Source Current (Body Diode)(c)(d)

19

-9.6

A

Linear Derating Factor

0.87

6.9

W

mW/°C

Linear Derating Factor

1.04

8.3

W

mW/°C

Linear Derating Factor

1.25

10

W

mW/°C

Operating and Storage Temperature Range

-55 to +150

°C

ZXMD63C02X

PROVISIONAL ISSUE A - JUNE 1999